Micron Technology SLD4M18DR400VS-400 | 搜芯易Sourcengine

Micron Technology SLD4M18DR400VS-400

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
4MX18, CMOS
类别
Semiconductors Memory ICs DRAMs SLDRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Memory Width
18
Self Refresh
YES
Memory IC Type
SLDRAM
Refresh Cycles
8192
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Memory Organization
4MX18
Number of Terminals
64
Number of Words Code
4M
Memory Density (bits)
75497472
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
2.5
Number of Words (words)
4194304
Clock Frequency-Max (MHz)
200
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0