RF MICRO DEVICES INC SLD-1026Z | 搜芯易Sourcengine

RF MICRO DEVICES INC SLD-1026Z

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
5A991.G
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

JESD-30 Code
R-PDFP-F6
Configuration
SINGLE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON