SKM150GB101D
SEMIKRON INTERNATIONAL
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max4 V
- JESD-30 CodeR-PUFM-X7
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements2
- Number of Terminals7
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)150 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)700 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)150 A
- Power Dissipation-Max (Abs)1000 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6.5 V
- Collector-emitter Voltage-Max1000 V
- Power Dissipation Ambient-Max2000 W
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SKM150GB101D