SEMIKRON INTERNATIONAL SKIM125GD127D | 搜芯易Sourcengine

SEMIKRON INTERNATIONAL SKIM125GD127D

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.85 V
JESD-30 Code
R-XUFM-X39
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
6
Number of Terminals
39
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
120 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
495 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
125 A
Power Dissipation-Max (Abs)
446 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V