SKIIP39GB12E4V1M25
SEMIKRON INTERNATIONAL
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XUFM-X9
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional FeatureFREE WHEELING DIODE, HIGH RELIABILITY
- Number of Elements2
- Number of Terminals9
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)245
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Nom (toff) (ns)638
- Collector Current-Max (IC) (A)580
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Collector-emitter Voltage-Max (V)1200
- Screening Level / Reference StandardUL RECOGNIZED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SKIIP39GB12E4V1M25