SEMIKRON INTERNATIONAL SKIIP35ACC12T4V10 | 搜芯易Sourcengine

SEMIKRON INTERNATIONAL SKIIP35ACC12T4V10

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 62A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.1 V
JESD-30 Code
R-XUFM-X32
Configuration
2 BANKS, BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
12
Reference Standard
IEC-60747-1; UL RECOGNIZED
Number of Terminals
32
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
175 Cel
Operating Temperature-Min
-40 Cel
Collector Current-Max (IC)
62 A
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.5 V
Collector-emitter Voltage-Max
1200 V