SKIIP26GB12T4V1
SEMIKRON INTERNATIONAL
- 生命周期状态Active
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XUFM-X36
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements2
- Number of Terminals36
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)215
- Turn-off Time-Nom (toff) (ns)531
- Collector Current-Max (IC) (A)290
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Collector-emitter Voltage-Max (V)1200
- Screening Level / Reference StandardUL RECOGNIZED
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SKIIP26GB12T4V1
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SKIIP26GB12T4V1