SKIIP25NAB12T7V1
SEMIKRON INTERNATIONAL
- 生命周期状态Active
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 66A I(C), 1200V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XUFM-X39
- ConfigurationCOMPLEX
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)1.7
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements7
- Number of Terminals39
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)69
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)301
- Collector Current-Max (IC) (A)66
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)6.45
- Collector-emitter Voltage-Max (V)1200
- Screening Level / Reference StandardIEC-61340; UL RECOGNIZED
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SKIIP25NAB12T7V1