SKIIP10NEC06
SEMIKRON INTERNATIONAL
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XXSS-X25
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE
- Package ShapeRECTANGULAR
- Package StyleSPECIAL SHAPE Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)2.7
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUNSPECIFIED
- Number of Elements6
- Number of Terminals25
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)100
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)770
- Collector Current-Max (IC) (A)11
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)600
- Screening Level / Reference StandardUL RECOGNIZED
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SKIIP10NEC06