INFINEON TECHNOLOGIES AG SKB10N60A | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SKB10N60A

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Fall Time-Max (ns)
32
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
15
Power Dissipation-Max (W)
92
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
40
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
245
Turn-off Time-Nom (toff) (ns)
224
Collector Current-Max (IC) (A)
20
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
600