SK225GH07H5TD1E2
SEMIKRON INTERNATIONAL
- 生命周期状态Active-Unconfirmed
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 215A I(C), 650V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XUFM-X31
- ConfigurationBRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)2.22
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements4
- Number of Terminals31
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Gate-emitter Voltage-Max (V)20
- Collector Current-Max (IC) (A)215
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)4.7
- Collector-emitter Voltage-Max (V)650
- Screening Level / Reference StandardIEC-61340; UL RECOGNIZED
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SK225GH07H5TD1E2