Vishay Intertechnology, Inc. SIZ918DT-T1-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SIZ918DT-T1-GE3

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 30V 16A/28A 8-Pin PowerPAIR EP T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-N6
Configuration
2 N-Channel (Half Bridge)
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN SOURCE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
16
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Avalanche Energy Rating (Eas) (mJ)
16
Pulsed Drain Current-Max (IDM) (A)
50
Drain-source On Resistance-Max (ohm)
0.012