Vishay Intertechnology, Inc. SISS32DN-T1-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SISS32DN-T1-GE3

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 80V 17.4A 8-Pin PowerPAK 1212 EP T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PDSO-N8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
65.7
Drain Current-Max (ID) (A)
63
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
42
DS Breakdown Voltage-Min (V)
80
Feedback Cap-Max (Crss) (pF)
4
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
50
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
20
Pulsed Drain Current-Max (IDM) (A)
150
Drain-source On Resistance-Max (ohm)
0.0087
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED