Vishay Intertechnology, Inc. SIRB40DP-T1-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SIRB40DP-T1-GE3

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 40V 40A 8-Pin PowerPAK SO EP T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F8
Configuration
Dual N-CH
Package Shape
RECTANGULAR
Package Style
POWERPAK-SO-8
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
46.2
Drain Current-Max (ID) (A)
40
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
248
DS Breakdown Voltage-Min (V)
40
Feedback Cap-Max (Crss) (pF)
102
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
84
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
31.25
Pulsed Drain Current-Max (IDM) (A)
100
Drain-source On Resistance-Max (ohm)
0.00325
Time@Peak Reflow Temperature-Max (s)
30