Vishay Intertechnology, Inc. SIRA10BDP-T1-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SIRA10BDP-T1-GE3

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
43
Drain Current-Max (ID) (A)
60
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
55
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
68
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
70
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
20
Pulsed Drain Current-Max (IDM) (A)
150
Drain-source On Resistance-Max (ohm)
0.0036
Time@Peak Reflow Temperature-Max (s)
30