Vishay Intertechnology, Inc. SIR814DP-T1-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SIR814DP-T1-GE3

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET N-CH 40V 60A PPAK SO-8
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-C5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
C BEND
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
104
Drain Current-Max (ID) (A)
60
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
80
Pulsed Drain Current-Max (IDM) (A)
100
Drain-source On Resistance-Max (ohm)
0.0029
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED