SIHJ6N65E-T1-GE3
Vishay Intertechnology, Inc.
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明MOSFET N-CH 650V 5.6A PPAK SO-8
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)74
- Drain Current-Max (ID) (A)5.6
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)56
- DS Breakdown Voltage-Min (V)650
- Feedback Cap-Max (Crss) (pF)4
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Max (toff) (ns)84
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)36
- Pulsed Drain Current-Max (IDM) (A)12
- Drain-source On Resistance-Max (ohm)0.868
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SIHJ6N65E-T1-GE3