SIHH20N50E-T1-GE3
Vishay Intertechnology, Inc.
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明MOSFET N-CH 500V 22A PPAK 8 X 8
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PSSO-N4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)174
- Drain Current-Max (ID) (A)22
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)126
- DS Breakdown Voltage-Min (V)500
- Feedback Cap-Max (Crss) (pF)7
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Max (toff) (ns)183
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)286
- Pulsed Drain Current-Max (IDM) (A)53
- Drain-source On Resistance-Max (ohm)0.147
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
SIHH20N50E-T1-GE3有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
SIHH20N50E-T1-GE3