Vishay Intertechnology, Inc. SIHH150N60E-T1-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SIHH150N60E-T1-GE3

生命周期状态
Active
RoHS
符合RoHS标准
说明
E SERIES POWER MOSFET POWERPAK 8
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PSSO-N4
Configuration
SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
156
Drain Current-Max (ID) (A)
19
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
94
DS Breakdown Voltage-Min (V)
600
Feedback Cap-Max (Crss) (pF)
2
Turn-off Time-Max (toff) (ns)
90
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
179
Pulsed Drain Current-Max (IDM) (A)
43
Drain-source On Resistance-Max (ohm)
0.158