Vishay Intertechnology, Inc. SIHG22N50D-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SIHG22N50D-GE3

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET N-CH 500V 22A TO247AC
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247AC
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
22
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Avalanche Energy Rating (Eas) (mJ)
139
Pulsed Drain Current-Max (IDM) (A)
67
Drain-source On Resistance-Max (ohm)
0.23
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED