Vishay Intertechnology, Inc. SIHFU9024 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SIHFU9024

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
42
Drain Current-Max (ID) (A)
8.8
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
300
Pulsed Drain Current-Max (IDM) (A)
35
Drain-source On Resistance-Max (ohm)
0.28