Vishay Intertechnology, Inc. SIHB35N60ET5-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SIHB35N60ET5-GE3

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 32A I(D), 600V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
250
Drain Current-Max (ID) (A)
32
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
150
DS Breakdown Voltage-Min (V)
600
Feedback Cap-Max (Crss) (pF)
5
Turn-off Time-Max (toff) (ns)
181
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
691
Pulsed Drain Current-Max (IDM) (A)
80
Drain-source On Resistance-Max (ohm)
0.094