Vishay Intertechnology, Inc. SIHB23N60E-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SIHB23N60E-GE3

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET 600v n-ch d2pak
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
Single
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
TO-263-3 (D2PAK)
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
23
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Avalanche Energy Rating (Eas) (mJ)
353
Pulsed Drain Current-Max (IDM) (A)
63
Drain-source On Resistance-Max (ohm)
0.158
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
9.65 mm
Length
10.67 mm