Vishay Intertechnology, Inc. SIHB120N60E-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SIHB120N60E-GE3

生命周期状态
Active
RoHS
符合RoHS标准
说明
MOSFET N-CH 600V 25A D2PAK
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
179
Drain Current-Max (ID) (A)
25
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
168
DS Breakdown Voltage-Min (V)
600
Feedback Cap-Max (Crss) (pF)
6
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
128
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
88
Pulsed Drain Current-Max (IDM) (A)
66
Drain-source On Resistance-Max (ohm)
0.12
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED