INFINEON TECHNOLOGIES AG SIGC76T65R3E | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SIGC76T65R3E

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUUC-N9
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
VCEsat-Max (V)
1.2
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
9
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.4
Collector-emitter Voltage-Max (V)
650
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED