INFINEON TECHNOLOGIES AG SIGC25T60SNCUNSAWNX6SA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SIGC25T60SNCUNSAWNX6SA1

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 600V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.5 V
Polarity/Channel Type
N-Channel
Turn-on Time-Nom (ton)
93 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
469 ns
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
5 V
Collector-emitter Voltage-Max
600 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED