INFINEON TECHNOLOGIES AG SIGC25T120CX1SA4 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SIGC25T120CX1SA4

生命周期状态
Active
说明
Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUUC-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
100
Turn-off Time-Nom (toff) (ns)
470
Collector Current-Max (IC) (A)
32
Collector-emitter Voltage-Max (V)
1200