INFINEON TECHNOLOGIES AG SIGC12T120LX1SA2 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SIGC12T120LX1SA2

生命周期状态
Active
说明
Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUUC-N2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
J-STD-609 Code
e3
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
2
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
300
Turn-off Time-Nom (toff) (ns)
500
Collector Current-Max (IC) (A)
8
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200