SIGC10T60EX1SA1
INFINEON TECHNOLOGIES AG
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Current-Max (IC) (A)20
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)600
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SIGC10T60EX1SA1