INFINEON TECHNOLOGIES AG SIGC100T65R3EX1SA2 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SIGC100T65R3EX1SA2

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT CHIP
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
200
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
6.4
Collector-emitter Voltage-Max (V)
650
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED