Vishay Intertechnology, Inc. SIB419DK-T1-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SIB419DK-T1-GE3

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PDSO-N6
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
13.1
Transistor Element Material
SILICON
Operating Temperature-Max (Cel)
150