Vishay Intertechnology, Inc. SIA511DJ-T1-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SIA511DJ-T1-GE3

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET N/P-CH 12V 4.5A SC70-6
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-PDSO-N6
Configuration
N and P-Channel
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (W)
6.5
Drain Current-Max (ID) (A)
4.5
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
25
DS Breakdown Voltage-Min (V)
12
Feedback Cap-Max (Crss) (pF)
70
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
40
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
20
Drain-source On Resistance-Max (ohm)
0.04
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED