Vishay Intertechnology, Inc. SIA427ADJ-T4-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SIA427ADJ-T4-GE3

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 12A I(D), 8V, 0.016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
S-PDSO-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
19
Drain Current-Max (ID) (A)
12
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
60
DS Breakdown Voltage-Min (V)
8
Feedback Cap-Max (Crss) (pF)
690
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
165
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
3.5
Pulsed Drain Current-Max (IDM) (A)
50
Drain-source On Resistance-Max (ohm)
0.016
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED