Vishay Intertechnology, Inc. SI9926ADY | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SI9926ADY

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 4.8A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.25
Drain Current-Max (ID) (A)
4.8
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
95
DS Breakdown Voltage-Min (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
105
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
30
Drain-source On Resistance-Max (ohm)
0.03
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED