SI9407AEY-T1-GE3
Vishay Intertechnology, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明Power Field-Effect Transistor, 3.5A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Elements1
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)3
- Drain Current-Max (ID) (A)3.5
- Operating Temperature-Max (Cel)175
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