Vishay Intertechnology, Inc. SI8902EDB-T2-E1 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SI8902EDB-T2-E1

生命周期状态
Active
RoHS
符合RoHS标准
说明
MOSFET 2N-CH 20V 3.9A 6MICROFOOT
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XBGA-B6
Configuration
2 N-Channel (Dual) Common Drain
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e1
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
ESD PROTECTED, ULTRA-LOW RESISTANCE
Number of Elements
2
Number of Terminals
6
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.7
Drain Current-Max (ID) (A)
3.9
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Drain-source On Resistance-Max (ohm)
0.072