Vishay Intertechnology, Inc. SI8481DB-T1-E1 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SI8481DB-T1-E1

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET P-CH 20V 9.7A 4MICRO FOOT
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PBGA-B4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Drain-source On Resistance-Max (ohm)
0.025
Time@Peak Reflow Temperature-Max (s)
30