SI8475EDB-T1-E1
Vishay Intertechnology, Inc.
- 生命周期状态EOL
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明MOSFET P-CH 20V 4MICROFOOT
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PBGA-B4
- ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
- Package ShapeSQUARE
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishPURE MATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)2.7
- Drain Current-Max (ID) (A)7.7
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)20
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)80
- Pulsed Drain Current-Max (IDM) (A)25
- Drain-source On Resistance-Max (ohm)0.051
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SI8475EDB-T1-E1