VISHAY SILICONIX SI7601DN-T1-E3 | 搜芯易Sourcengine

VISHAY SILICONIX SI7601DN-T1-E3

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET P-CH 20V 16A PPAK1212-8
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-XDSO-C5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
C BEND
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
UNSPECIFIED
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID) (A)
11.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Avalanche Energy Rating (Eas) (mJ)
11.25
Pulsed Drain Current-Max (IDM) (A)
40
Drain-source On Resistance-Max (ohm)
0.0192