SI6967DQ-T1-GE3
Vishay Intertechnology, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Small Signal Field-Effect Transistor, 5A I(D), P-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-609 Codee3
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Terminal FinishMATTE TIN
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)5 A
- Operating Temperature-Max150 Cel
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)1.1 W
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
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