VISHAY SILICONIX SI6433DQ-T1 | 搜芯易Sourcengine

VISHAY SILICONIX SI6433DQ-T1

生命周期状态
Discontinued
说明
Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
4 A
DS Breakdown Voltage-Min
12 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
1.5 W
Drain-source On Resistance-Max
0.06 ohm