Vishay Intertechnology, Inc. SI5997DU-T1-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SI5997DU-T1-GE3

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET 2P-CH 30V 6A PPAK CHIPFET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-C6
Configuration
2 P-Channel (Dual)
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
C BEND
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
10.4
Drain Current-Max (ID) (A)
6
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
25
Drain-source On Resistance-Max (ohm)
0.054
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED