Vishay Intertechnology, Inc. SI5935CDC-T1-E3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SI5935CDC-T1-E3

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans MOSFET P-CH 20V 4A 8-Pin Chip FET T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XDSO-C8
Configuration
2 P-Channel (Dual)
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
C BEND
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Pure Matte Tin (Sn) - annealed
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
UNSPECIFIED
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
3.1
Drain Current-Max (ID) (A)
4
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Drain-source On Resistance-Max (ohm)
0.1
Time@Peak Reflow Temperature-Max (s)
30