Vishay Intertechnology, Inc. SI5908DC-T1-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SI5908DC-T1-GE3

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans MOSFET N-CH 20V 4.4A 8-Pin Chip FET T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F8
Configuration
2 N-Channel (Dual)
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Terminal Finish
PURE MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
ULTRA LOW RESISTANCE
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.1
Drain Current-Max (ID) (A)
4.4
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
85
DS Breakdown Voltage-Min (V)
20
Turn-off Time-Max (toff) (ns)
65
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
20
Drain-source On Resistance-Max (ohm)
0.04
Screening Level / Reference Standard
IEC-61249-2-21