SI5517DU-T1-E3
Vishay Intertechnology, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 6A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Power Dissipation-Max (W)8.3
- Drain Current-Max (ID) (A)6
- Operating Temperature-Max (Cel)150
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