SI5402DC-T1
Vishay Intertechnology, Inc.
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 4.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)2.5
- Drain Current-Max (ID) (A)4.9
- Operating Temperature-Max (Cel)150
SI5402DC-T1有0家供应商货源可供购买或竞价
提交询价
提交询价 您的询价单将直接发送给我们的销售专家: Pari
提交询价
SI5402DC-T1
提交询价
SI5402DC-T1