Vishay Intertechnology, Inc. SI4948EY-T1-GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SI4948EY-T1-GE3

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 3.1A I(D), 60V, 0.12ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JEDEC-95 Code
MS-012AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
2.4
Drain Current-Max (ID) (A)
3.1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
175
Pulsed Drain Current-Max (IDM) (A)
30
Drain-source On Resistance-Max (ohm)
0.12
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED