Vishay Intertechnology, Inc. SI4922BDY-T1-E3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SI4922BDY-T1-E3

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 8A I(D), 30V, 0.024ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
TRENCH MOSFET
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Matte Tin (Sn)
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
3.1
Drain Current-Max (ID) (A)
8
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
105
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
135
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
183
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-50
Avalanche Energy Rating (Eas) (mJ)
11.2
Pulsed Drain Current-Max (IDM) (A)
35
Drain-source On Resistance-Max (ohm)
0.024
Screening Level / Reference Standard
IEC-61249-2-21
Time@Peak Reflow Temperature-Max (s)
30