SI4833BDY-T1-GE3
Vishay Intertechnology, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 4.6A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Terminal FinishPURE MATTE TIN
- Number of Elements1
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)2.75
- Drain Current-Max (ID) (A)4.6
- Moisture Sensitivity Level1
- Operating Temperature-Max (Cel)150
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