SI4565ADY-T1-E3
Vishay Intertechnology, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Small Signal Field-Effect Transistor, 6.6A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Terminal FinishMATTE TIN
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Power Dissipation-Max (W)3.1
- Drain Current-Max (ID) (A)6.6
- Moisture Sensitivity Level1
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Time@Peak Reflow Temperature-Max (s)30
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